发明名称 |
METHOD OF FORMING GALLIUM NITRIDE NANO STRUCTURE USING NANO SPHERE |
摘要 |
PURPOSE: A gallium nitride nanostructure forming method using nanospheres is provided to form the gallium nitride nanostructure having a 3-dimentional shape in a short period of time by arraigning a plurality of nanoshperes on a top surface of a substrate and forming a nanopattern. CONSTITUTION: A galluim nitride nanostructure forming method using nanospheres comprises the steps of: (S110) arranging a plurality of nanospheres on a top surface of a substrate at a single layer; (S120) forming a nanopattern having multiple hemispherical grooves on the top surface of the substrate by allowing a silicasol solution to be permeated through gaps between the plurality of nanospheres; (S130) removing the plurality of nanosphers by using a chemical dissolving method or a combustion method; (S140) heating the nanopattern removed with the nanospheres at a constant temperature to crystallize the nanopattern; (S150) forming a zinc oxide nanostructure having a rod shape inside each of the hemispherical grooves of the crystallized nanopattern; and (S160) heterobinding gallium nitride(GaN) on an outer surface of the zinc oxide nanostructure to form a gallium nitride nanostructure. [Reference numerals] (S110) Step of arranging nanospheres; (S120) Step of forming a nanopattern; (S130) Step of removing the nanospheres; (S140) Step of heat-treating; (S150) Step of forming a ZnO nanostructure; (S160) Step of forming a rod-type GaN nanostructure; (S170) Step of forming a pyramid type GaN nanostructure
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申请公布号 |
KR20130050487(A) |
申请公布日期 |
2013.05.16 |
申请号 |
KR20110115572 |
申请日期 |
2011.11.08 |
申请人 |
UNIST ACADEMY-INDUSTRY RESEARCH CORPORATION |
发明人 |
BAIK, JEONG MIN;YE, BYEONG UK |
分类号 |
B82B3/00;B82B1/00;B82Y40/00 |
主分类号 |
B82B3/00 |
代理机构 |
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