METHOD FOR ETCHING OF PALLADIUM LAYER FOR OPTO-ELECTRONIC DEVICE

摘要

PURPOSE: A method for etching a palladium metal layer for an opto-electronic device is provided to generate a 3D-compressive stress in a palladium crystal lattice by infiltrating hydrogen into the palladium metal layer, and to form an accurate ridge pattern on the palladium metal layer. CONSTITUTION: Palladium is deposited to form a palladium metal layer on a substrate(S11). A PR(Photoresist) pattern is formed on the palladium metal layer(S12). The palladium metal layer is pre-processed by using hydrogen plasma to infiltrate hydrogen into the palladium metal layer(S13). The palladium metal layer pre-processed by the hydrogen plasma is dry-etched(S14). [Reference numerals] (S11) Deposit palladium; (S12) Form a PR pattern on a palladium metal layer; (S13) Pre-process by hydrogen plasma; (S14) Dry-etch