OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To inhibit an occurrence of oxygen defect.

SOLUTION: An oxide semiconductor film is composed of germanium (Ge) instead of the whole or a part of gallium (Ga) or stannum (Sn). A germanium (Ge) atom has at least one bond energy with an oxygen (O) atom higher than that of gallium (Ga) or stannum (Sn). Because of this, oxygen defect is not likely to occur when an oxide semiconductor crystal is composed of germanium (Ge). Accordingly, by composing the oxide semiconductor film by germanium (Ge), an occurrence of oxygen defect is inhibited.

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