| 发明名称 |
SEMICONDUCTOR STRUCTURE HAVING THROUGH-SUBSTRATE VIA AND MANUFACTURING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a via hole which is through a substrate. <P>SOLUTION: A semiconductor device structure includes a substrate having a background doping of a first concentration and of a first conductivity type. A through-substrate via is through the substrate. A device has a first doped region of a second conductivity type on a first side of the substrate. A second doped region is around the through-substrate via. The second doped region has a doping of a second concentration greater than the first concentration and is of the first conductivity type. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013093579(A) |
申请公布日期 |
2013.05.16 |
| 申请号 |
JP20120234265 |
申请日期 |
2012.10.24 |
| 申请人 |
FREESCALE SEMICONDUCTOR INC |
发明人 |
THUY B DAO;JOEL E KEYS;HERNAN A RUEDA;PAUL W SANDERS |
| 分类号 |
H01L21/336;H01L21/265;H01L21/3205;H01L21/768;H01L23/522;H01L29/41;H01L29/417;H01L29/78;H01L29/861;H01L29/868 |
主分类号 |
H01L21/336 |
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