| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a method capable of entirely processing a desired area to be processed of a base material in a short period of time when uniformly performing high temperature heat treatment on a base material adjacent to the surface thereof for an extremely short period of time, or when performing low temperature plasma processing on a base material by irradiating plasma of a reaction gas or by simultaneously irradiating a base material with plasma and a reaction gas flow. <P>SOLUTION: An inductively coupled plasma torch unit T includes: a spiral coil 3 disposed within a coolant flow path enclosed by a first quartz plate 4, a second quartz plate 5 and a coolant case 16; and a plasma injection port 8 formed in the bottom. The second quartz plate 5 and the coolant case 16 are secured by bolts 19 each screwed into a tap 18 respectively. While supplying a gas into a space 7 inside a long chamber enclosed by the second quartz plate 5 and a third quartz plate 6, a high-frequency power is supplied to the spiral coil 3 to generate a plasma in the space 7 inside the long chamber to thereby irradiate a base material 2 with the plasma. <P>COPYRIGHT: (C)2013,JPO&INPIT |
