发明名称 REFERENCE VOLTAGE GENERATION CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a reference voltage generation circuit that can sufficiently improve temperature characteristics of reference voltage by simple adjustment using a small scale additional circuit. <P>SOLUTION: The reference voltage generation circuit comprises: a bipolar transistor 106; a bipolar transistor 107 connected in parallel with a bipolar transistor 106; a resistance element 104 having one end connected to an emitter of the bipolar transistor 107; a resistance element 109 that generates difference voltage caused by a difference between a base potential of the bipolar transistor 106 and a base potential of the bipolar transistor 107; a computing amplifier 105 that operates so as to equalize an emitter potential of the bipolar transistor 106 and a potential of the other end of the resistance element 104. The difference voltage generated by the resistance element 109 changes with temperature. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013092926(A) 申请公布日期 2013.05.16
申请号 JP20110234939 申请日期 2011.10.26
申请人 ASAHI KASEI ELECTRONICS CO LTD 发明人
分类号 G05F3/30;H03F1/30 主分类号 G05F3/30
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