| 摘要 |
<P>PROBLEM TO BE SOLVED: To adjust the mixing ratio and flow rate of a material gas in each of a plurality of regions on a susceptor. <P>SOLUTION: The vapor growth device comprises: a susceptor 120 on which a processed substrate 10 is mounted; a shower head 130 supplying a plurality of material gases onto the processed substrate 10; a plurality of mixing pipes introducing a predetermined number of material gases out of the plurality of material gases to the shower head 130 while mixing; and a plurality of gas branch mechanisms feeding each of the plurality of material gases to any one of the plurality of mixing pipes while adjusting the flow rate and branching. The shower head 130 sprays a plurality of mixed gases mixed, respectively, in the plurality of mixing pipes to a plurality of regions on the susceptor. In each of the plurality of mixed gases, the concentration and flow rate each of the plurality of predetermined material gases are adjusted. <P>COPYRIGHT: (C)2013,JPO&INPIT |
