| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can print on a substrate while inhibiting adhesion of particles. <P>SOLUTION: A manufacturing method of a MOSFET 1 comprises: a step of preparing a substrate 10 composed of a semiconductor; a step of forming a protection film 20 so as to cover at least a part of a principal surface 10A of the substrate 10; and a step of printing on the substrate 10 by irradiating the principal surface 10A on which the protection film 20 is formed with laser beams Lb. In the step of forming the protection film 20, the protection film 20 composed of a material having bandgap larger than that of the semiconductor composing the substrate 10 is formed. In the step of printing on the substrate 10, laser beams Lb of a wavelength in which an absorption coefficient by a material composing the protection film 20 is smaller than that of the semiconductor composing the substrate 10 are radiated. <P>COPYRIGHT: (C)2013,JPO&INPIT |
