发明名称 |
SURFACE TREATMENT METHOD OF POLISHING PAD AND POLISHING METHOD OF WAFER USING THE SAME |
摘要 |
PURPOSE: A surface treating method of a polishing pad and a method for polishing a wafer using the same are provided to reduce processing time by easily controlling the partial abrasion of the wafer. CONSTITUTION: A wafer is located on a polishing pad(S10). Polishing materials are included in the polishing pad. Abrasives are supplied between the polishing pad and the wafer. The polishing materials are exposed(S20). The wafer is polished by the exposed polishing materials(S30). [Reference numerals] (S10) Locate a sapphire wafer on a polishing pad including polishing materials; (S20) Expose the polishing materials included in the polishing pad by supplying abrasives; (S30) Polish the sapphire wafer by the exposed polishing materials
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申请公布号 |
KR20130049869(A) |
申请公布日期 |
2013.05.15 |
申请号 |
KR20110114891 |
申请日期 |
2011.11.07 |
申请人 |
LG SILTRON INCORPORATED |
发明人 |
CHOI, SE HUN;KIM, KYEONG SOON;MUN, YOUNG HEE |
分类号 |
H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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