发明名称 |
DETECTION OF BROKEN WORD-LINES IN MEMORY ARRAYS |
摘要 |
<p>Techniques and corresponding circuitry are presented for the detection of broken wordlines in a memory array. In an exemplary embodiment, a program operation of the memory circuit is performed on a first plurality of memory cells along a word-line, where the programming operation includes a series of alternating programming pulses and verify operations, with the memory cells individually locking out from further programming pulses as verified. The determination of whether the word-line is defective based on the number of programming pulses for the memory cells of a first subset of the first plurality to verify as programmed relative to the number of programming pulses for the memory cells of a second subset of the first plurality to verify as programmed, where the first and second subsets each contain multiple memory cells and are not the same.</p> |
申请公布号 |
EP2591472(A1) |
申请公布日期 |
2013.05.15 |
申请号 |
EP20110729863 |
申请日期 |
2011.06.24 |
申请人 |
SANDISK TECHNOLOGIES INC. |
发明人 |
SHAH, GRISHMA SHAILESH;LI, YAN |
分类号 |
G11C29/02 |
主分类号 |
G11C29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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