CIRCUIT FOR PROTECTING AGAINST REVERSE POLARITY

摘要

A circuit for protecting an electric load against reverse polarity is provided by using a MOSFET (metal oxide semiconductor field-effect transistor), wherein: the circuit is connected on the input side to a voltage supply and on the output side to the load; the source connection of the MOSFET is connected to the voltage supply; the drain connection of the MOSFET is connected to the load; the circuit has dynamic behavior similar to a diode and at the same time low power loss; the gate of the MOSFET is connected to the collector of a first bipolar transistor; the source of the MOSFET is connected to the emitter of the first bipolar transistor; the base of the first bipolar transistor is controlled by a control current; and the control current is derived from the voltage at the drain of the MOSFET.