LIGHT-EMITTING DIODES AND METHODS OF MANUFACTURING THE LIGHT-EMITTING DIODES
摘要
PURPOSE: A light emitting diode and a method for manufacturing the same are provided to form an n-type semiconductor for emitting green light and absorbing blue light on an active layer for generating blue light, and secure a high efficiency green light emitting device. CONSTITUTION: A p-type compound semiconductor layer(130) is formed in the upper part of a substrate(110). An active layer(150) is formed in the upper part of the p-type compound semiconductor layer. An active layer emits blue wavelength light. An n-type oxide semiconductor layer(170) made of zinc oxide is formed in the upper part of the active layer. The n-type oxide semiconductor layer absorbs the green wavelength light to emit the blue wavelength light.
申请公布号
KR101263133(B1)
申请公布日期
2013.05.15
申请号
KR20120020012
申请日期
2012.02.28
申请人
KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
发明人
BYUN, DONG JIN;JANG, SAM SEOK;PARK, KI SUN;KIM, A YOUNG;LEE, DO HAN