发明名称 |
Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel |
摘要 |
<p>Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) and methods of fabricating silicon carbide MOSFETs are provided. The silicon carbide MOSFETs have an n-type silicon carbide drift layer, spaced apart p-type silicon carbide regions in the n-type silicon carbide drift layer and having n-type silicon carbide regions therein, and a nitrided oxide layer. The MOSFETs also have n-type shorting channels extending from respective ones of the n-type silicon carbide regions through the p-type silicon carbide regions to the n-type silicon carbide drift layer. In further embodiments, silicon carbide MOSFETs and methods of fabricating silicon carbide MOSFETs are provided that include a region that is configured to self-deplete the source region, between the n-type silicon carbide regions and the drift layer, adjacent the oxide layer, upon application of a zero gate bias.</p> |
申请公布号 |
EP2261955(B1) |
申请公布日期 |
2013.05.15 |
申请号 |
EP20100182120 |
申请日期 |
2001.09.28 |
申请人 |
CREE, INC. |
发明人 |
RYU, SEI-HYUNG;AGARWAL, ANANT K;DAS, MRINAL KANTI;LIPKIN, LORI A;PALMOUR, JOHN W.;SINGH, RANBIR |
分类号 |
H01L21/336;H01L21/04;H01L29/10;H01L29/12;H01L29/24;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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