MAKING METHOD FOR TRANSPARENCY CONDUCTIVE OXIDE OF THIN FILM SOLAR CELL

摘要

PURPOSE: A method for manufacturing a transparent conduction layer for a thin film solar cell is provided to improve the adhesion between a substrate and a transparent conduction layer by the collision of the substrate with the plasma positive ions of the mixed gas of argon and oxygen. CONSTITUTION: A carrier having a substrate is transferred into a process chamber(S110). A pre-heating process is performed in a first buffer and a thermal process chamber(S120). The positive ions of plasma collide with the substrate in a first process chamber(S130). Aluminum-zinc-oxide is sputtered to form a transparent conduction thin film layer in a second process chamber(S140). The aluminum-zinc-oxide is sputtered to form a transparent conduction thin film layer in a third process chamber(S150). The aluminum-zinc-oxide is sputtered to form a transparent conduction thin film layer in a fourth process chamber(S160). The aluminum-zinc-oxide is sputtered to form a transparent conduction thin film layer in a fifth process. A post heating process is performed in a second buffer and a thermal process chamber(S180). [Reference numerals] (S110) Transfer a substrate mounted carrier to a process chamber; (S120) Pre-heating process in a first buffer and a thermal process chamber; (S130) Collide positive ions of plasma with the substrate in a first process chamber; (S140) Form a transparent conduction thin film layer by sputtering aluminum-zinc-oxide in a second process chamber; (S150) Form a transparent conduction thin film layer by sputtering aluminum-zinc-oxide in a third process chamber; (S160) Form a transparent conduction thin film layer by sputtering aluminum-zinc-oxide in a fourth process chamber; (S170) Form a transparent conduction thin film layer by sputtering aluminum-zinc-oxide in a fifth process chamber; (S180) Post heating process in a second buffer and thermal process chamber