发明名称 |
Exposure determining method, method of manufacturing semiconductor device, and computer program product |
摘要 |
According to one embodiment, a deviation amount distribution of a two-dimensional shape parameter between a mask pattern formed on a mask and a desired mask pattern is acquired as a mask pattern map. Such that a deviation amount of the two-dimensional shape parameter between a pattern on substrate formed when the mask is subjected to exposure shot to form a pattern on a substrate and a desired pattern on substrate fits within a predetermined range, an exposure is determined for each position in the exposure shot in forming the pattern on substrate based on the mask pattern map. |
申请公布号 |
US8440376(B2) |
申请公布日期 |
2013.05.14 |
申请号 |
US201113007238 |
申请日期 |
2011.01.14 |
申请人 |
KOTANI TOSHIYA;FUKUHARA KAZUYA;TAKIMOTO MICHIYA;MUKAI HIDEFUMI;INOUE SOICHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KOTANI TOSHIYA;FUKUHARA KAZUYA;TAKIMOTO MICHIYA;MUKAI HIDEFUMI;INOUE SOICHI |
分类号 |
G03F9/00;G03C5/00 |
主分类号 |
G03F9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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