发明名称 |
Memory device and method of fabricating the same |
摘要 |
A memory device and a method of fabricating the same are provided. The memory device includes a tunneling dielectric layer on a substrate, a charge storage layer on the tunneling dielectric layer, a blocking dielectric layer on the charge storage layer, the blocking dielectric layer including a first dielectric layer having silicon oxide, a second dielectric layer on the first dielectric layer and having aluminum silicate, and a third dielectric layer formed on the second dielectric layer and having aluminum oxide, and an upper electrode on the blocking dielectric layer. |
申请公布号 |
US8440527(B2) |
申请公布日期 |
2013.05.14 |
申请号 |
US20100659357 |
申请日期 |
2010.03.05 |
申请人 |
YOO DONG-CHUL;LEE EUN-HA;LEE HYUNG-IK;HWANG KI-HYUN;HEO SUNG;CHOI HAN-MEI;KYOUNG YONG-KOO;KIM BYONG-JU;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOO DONG-CHUL;LEE EUN-HA;LEE HYUNG-IK;HWANG KI-HYUN;HEO SUNG;CHOI HAN-MEI;KYOUNG YONG-KOO;KIM BYONG-JU |
分类号 |
H01L29/788;H01L21/336;H01L29/66;H01L29/792 |
主分类号 |
H01L29/788 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|