INTEGRATED CIRCUIT HAVING A MOM CAPACITOR AND METHOD OF MAKING SAME

摘要

PURPOSE: An integrated circuit including a MOM(Metal Oxide Metal) capacitor and a manufacturing method thereof are provided to reduce the size of the integrated circuit by using a thin fin structure. CONSTITUTION: A capacitor dielectric layer is arranged on the main surface of a substrate. A first semiconductor fin(4) is extended to the main surface in a first recess. A first capacitor electrode(2) is arranged on the upper side of the first semiconductor fin. A second semiconductor fin(8) is arranged in a second recess. A second capacitor electrode(6) is arranged on the upper side of the second semiconductor fin.