METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS

摘要

PURPOSE: Methods for forming doped silicon oxide thin films are provided to easily deposit oxide by using an ALC(Atomic Layer Deposition) process. CONSTITUTION: A pulse of a silicon precursor is supplied to a reaction chamber(110). A pulse of a dopant precursor is supplied to the reaction chamber. The extra silicon and dopant precursors are removed(120). The substrate is contacted with reactive species(130). Doped silicon oxide is formed. [Reference numerals] (110) Bring a silicon precursor into contact with a substrate; (120) Connect a dopant precursor to the substrate; (130) Bring oxygen plasma into contact with the substrate; (140) Repeat