发明名称 |
Germanium-containing dielectric barrier for low-K process |
摘要 |
A semiconductor structure and methods of forming the same are provided. The semiconductor structure includes a semiconductor substrate; a first dielectric layer over the semiconductor substrate; a conductive wiring in the first dielectric layer; and a copper germanide nitride layer over the conductive wiring. |
申请公布号 |
US8440562(B2) |
申请公布日期 |
2013.05.14 |
申请号 |
US20100881939 |
申请日期 |
2010.09.14 |
申请人 |
LIU CHUNG-SHI;YU CHEN-HUA;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIU CHUNG-SHI;YU CHEN-HUA |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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