发明名称 |
A 3D CAPACITOR AND METHOD OF MANUFACTURING SAME |
摘要 |
PURPOSE: A 3D capacitor and a manufacturing method thereof are provided to increase the density of a device by including insulation materials arranged between a plurality of fins. CONSTITUTION: A substrate includes a fin structure(218). The fin structure includes a plurality of fins. Insulation materials are arranged between the plurality of fins. A dielectric layer(212) is arranged on the plurality of fins. A first electrode is directly contacted with the surface of the fin structure.
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申请公布号 |
KR20130049702(A) |
申请公布日期 |
2013.05.14 |
申请号 |
KR20120062598 |
申请日期 |
2012.06.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIU CHI WEN;WANG CHAO HSIUNG |
分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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