发明名称 A 3D CAPACITOR AND METHOD OF MANUFACTURING SAME
摘要 PURPOSE: A 3D capacitor and a manufacturing method thereof are provided to increase the density of a device by including insulation materials arranged between a plurality of fins. CONSTITUTION: A substrate includes a fin structure(218). The fin structure includes a plurality of fins. Insulation materials are arranged between the plurality of fins. A dielectric layer(212) is arranged on the plurality of fins. A first electrode is directly contacted with the surface of the fin structure.
申请公布号 KR20130049702(A) 申请公布日期 2013.05.14
申请号 KR20120062598 申请日期 2012.06.12
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIU CHI WEN;WANG CHAO HSIUNG
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
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