DEFECT ANALYZING METHOD OF SEMICONDUCTOR WAFER

摘要

PURPOSE: A method for analyzing the defect of a semiconductor wafer is provided to accurately determine detects by comparing a negative threshold value with a positive threshold value, and to improve product quality. CONSTITUTION: A difference image is generated(S10). A positive threshold value(Tp) is determined by calculating only the positive pixel value in the pixel value of the difference image(S20). A negative threshold value(Tp) is determined by calculating only the negative pixel value in the pixel value of the difference image(S30). A defect is determined as the pixel value of which absolute value is larger than the positive threshold value(S40). A defect value is determined as the pixel value of which absolute value is larger than the negative threshold value(S50). [Reference numerals] (S10) Step of generating a difference image; (S20) Step of determining a positive threshold value(T_P); (S30) Step of determining a negative threshold value(T_N); (S40) Step of determining a positive defect; (S50) Step of determining a negative defect