| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with excellent electrical characteristics. <P>SOLUTION: A method of manufacturing a semiconductor device according to an embodiment comprises the steps of: forming a plurality of recesses extending in a first direction on a silicon substrate; performing plasma treatment of the silicon substrate on which the recesses are formed in a gas containing fluorine or fluoride; performing heat treatment of the silicon substrate in a gas containing hydrogen after the plasma treatment; forming an insulating film on inner surfaces of the recesses after the heat treatment; and forming a conductive film on the insulating film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
