| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inspection method of a silicon block which allows for simple evaluation of the oxygen concentration in silicon in a state of silicon block. <P>SOLUTION: The inspection method of a silicon block cut out from a polysilicon ingot formed by unidirectional solidification includes a lifetime measurement step for measuring the lifetime of minority carriers of a silicon block, and an oxygen concentration calculation step for calculating the oxygen concentration of the silicon block from the lifetime measured in the lifetime measurement step. <P>COPYRIGHT: (C)2013,JPO&INPIT |
