| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light detection device which, while aiming at increasing area, can further improve temporal resolution. <P>SOLUTION: A semiconductor photodetector 10 includes a plurality of channels, each consisting of a photodiode array PDA which includes a plurality of avalanche photodiode APDs operating in Geiger mode, a quenching resistor R1 connected in series to each of the avalanche photodiode APDs, and a signal line TL having the quenching resistor R1 connected in parallel thereto. A mounting substrate 20 has a plurality of electrodes E9 corresponding one for one to each channel disposed on a principal plane 20a side, and also has a signal processing part SP to process the output signal from each channel disposed on a principal plane 20b side. A semiconductor substrate 1N has for each channel a through electrode TE formed therein which is electrically connected to the signal line TL. The through electrode TE and the electrode E9 are electrically connected via a bump electrode BE. <P>COPYRIGHT: (C)2013,JPO&INPIT |
