| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an etchant capable of forming a silicon substrate having fine pyramidal protrusions and recesses (texture structure) stably, without using a conventional etching retarder such as isopropyl alcohol. <P>SOLUTION: There is provided an etchant in which a silicon substrate is immersed in order to form pyramidal protrusions and recesses on the surface of the substrate. The etchant contains a compound (A) represented by following general formula (1) and alkali hydroxide (B). (In the formula (1), X represents a sulfonic acid group or an alkali salt thereof, R<SP POS="POST">1</SP>and R<SP POS="POST">2</SP>may be the same or different and each represent one kind selected from a group of hydrogen atom, alkyl group, alkenyl group, and alkynyl group (each having 1 or 2 carbon atoms) provided that the total number of carbon atoms of R<SP POS="POST">1</SP>and R<SP POS="POST">2</SP>is 0 to 2). <P>COPYRIGHT: (C)2013,JPO&INPIT |
