| 摘要 |
<p>Disclosed is a DMOS device manufacturing method, comprising: providing a base, comprising an active area and an interlayer dielectric ILD layer located on a surface of the active area, the ILD layer located on the surface of the active area being internally provided with a tungsten plug, and the surface of the ILD layer being flush with a surface of the tungsten plug; and removing an ILD layer material with a preset thickness, so that the surface of the ILD layer and the surface of the tungsten plug differ in the height. In the present invention, after the tungsten plug is formed, a back-etching process for the ILD layer is added, so that the tungsten plug surface and the ILD layer surface are not flush again, the metal area on a surface of the source area part and that of the gate area part are not flush again either, and therefore, the metal area of the gate area surface and the metal area of the source area surface differ in the light reflection capability. At the time of performing identification, after an identification light beam is projected onto a product chip, chromatic aberration exists between the gate area and the source area, so that the gate area and the source area of the DMOS device can be clearly identified through the chromatic aberration, thereby improving the accuracy of a subsequent wire bonding process.</p> |
