NON VOLATILE MEMORY, MANUFACTURING METHOD AND MEMORY SYSTEM THEREOF

摘要

PURPOSE: A nonvolatile memory device, a manufacturing method, and a memory system thereof are provided to minimize the interference between a memory cell and an erasing bulk layer in the erasing operation of the nonvolatile memory device. CONSTITUTION: A first NAND string includes a first lamination layer, a first composite insulating layer(130) vertically formed in a first space, and a first channel layer(170) filled in the first space. The first lamination layer includes an interlayer dielectric layer(120) laminated on a semiconductor substrate(110) and a conductive gate layer. A second NAND string includes a second lamination layer, a second composite insulating layer vertically formed in a second space, and a second channel layer filled in the second space. The second lamination layer includes an interlayer dielectric layer laminated on the first NAND string layer and the conductive gate layer. An erasing bulk layer(190) is positioned between the first NAND string and the second NAND string.