| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to protect a guard ring active region by forming a gate bit line in the upper part of the guide ring active region. CONSTITUTION: An active region(203) and an element isolation layer(205) defining a guard ring active region(204) are formed on a semiconductor substrate(200). The guard ring active region is formed along a cell region(I) and the edge part of a peripheral circuit region(II). A gate(210) is formed in the active region. A bit line contact plug(225a) is formed on the active region between the gate and the guard ring active region. A bit line(235) having a second polysilicon layer(225), a metal layer(227), and a hard mask layer(230) is formed in the upper part of the bit line contact plug.
|
