| 摘要 |
A method for manufacturing a solar cell from a p-doped or n-doped silicon substrate having a first main surface used as an incident-light side and a second main surface used as a back side includes: depositing a thin layer onto the second main surface; depositing a dielectric, glass-forming paste onto the second main surface and drying it, in order to cover the thin layer; heating and/or sintering the paste on the second main surface at temperatures greater than app. 577° C., to produce an aluminum dopant layer in the second main surface; and removing the glass layer formed during the heating and/or sintering, as well as an aluminum-silicon eutectic layer formed during the heating and/or sintering, from the second main surface. |
