| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element having high conversion efficiency and a method for manufacturing a photoelectric conversion element. <P>SOLUTION: In the photoelectric conversion element, an amorphous semiconductor layer is arranged adjacently between a transparent electrode layer and a p-type semiconductor layer, and the oxygen atom concentration of the amorphous semiconductor layer in a side adjacent to the p-type semiconductor layer is lower than the oxygen atom concentration thereof in a side adjacent to the transparent electrode layer. The method for manufacturing the photoelectric conversion element includes supplying carbon dioxide so that the oxygen atom concentration of the amorphous semiconductor layer in the side adjacent to the p-type semiconductor layer is lower than the oxygen atom concentration thereof in the side adjacent to the transparent electrode layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
