| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for facilitating formation of a fine feature by use of chromeless phase-shift lithography. <P>SOLUTION: An elongated, chromeless, bridging feature 104 is formed on a photolithography mask with an etching depth that causes a nominal phase difference of more than 180 degrees to energy passing through the photolithography mask. A corresponding photoresist feature is formed using the bridging feature 104. The phase difference is chosen to minimize dimensional variation of the corresponding photoresist feature. <P>COPYRIGHT: (C)2013,JPO&INPIT |
