发明名称 |
SIGE HBT AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A SiGe HBT is disclosed, which includes: a silicon substrate; shallow trench field oxides formed in the silicon substrate; a pseudo buried layer formed at bottom of each shallow trench field oxide; a collector region formed beneath the surface of the silicon substrate, the collector region being sandwiched between the shallow trench field oxides and between the pseudo buried layers; a polysilicon gate formed above each shallow trench field oxide having a thickness of greater than 150 nm; a base region on the polysilicon gates and the collector region; emitter region isolation oxides on the base region; and an emitter region on the emitter region isolation oxides and a part of the base region. The polysilicon gate is formed by gate polysilicon process of a MOSFET in a CMOS process. A method of manufacturing the SiGe HBT is also disclosed.
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申请公布号 |
US2013113020(A1) |
申请公布日期 |
2013.05.09 |
申请号 |
US201213613236 |
申请日期 |
2012.09.13 |
申请人 |
LIU DONGHUA;DUAN WENTING;QIAN WENSHENG;HU JUN;SHI JING;SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD. |
发明人 |
LIU DONGHUA;DUAN WENTING;QIAN WENSHENG;HU JUN;SHI JING |
分类号 |
H01L29/737;H01L21/331 |
主分类号 |
H01L29/737 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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