| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an organic thin-film transistor in which good contact between a source and a drain, and a semiconductor layer can be secured. <P>SOLUTION: The organic thin-film transistor comprises conductive layers in first and second regions respectively which face a source electrode and a drain electrode on a semiconductor layer made of an organic material. The conductive layers contain an oxide whose electrical conductivity is changed by a reduction reaction. The conductive layers function as contact layers between the semiconductor layer, and the source electrode and the drain electrode. In a top-contact structure, an etching stopper layer including the conductive layers can be formed on the semiconductor layer in a manufacturing process. <P>COPYRIGHT: (C)2013,JPO&INPIT |
