发明名称 |
SEMICONDUCTOR SUBSTRATE WITH MOLDED SUPPORT LAYER |
摘要 |
Various semiconductor substrates and methods of processing the same are disclosed. In one aspect, a method of manufacturing is provided that includes mounting a first semiconductor chip on a side of a first substrate. The first substrate has at least one thru-silicon-via. An insulating layer is molded on the side of the first substrate. The insulating layer provides a support structure to enable handling of the first substrate. |
申请公布号 |
US2013113084(A1) |
申请公布日期 |
2013.05.09 |
申请号 |
US201113289761 |
申请日期 |
2011.11.04 |
申请人 |
TOPACIO RODEN R.;MCLELLAN NEIL;LOW YIP SENG;LI JIANGUO |
发明人 |
TOPACIO RODEN R.;MCLELLAN NEIL;LOW YIP SENG;LI JIANGUO |
分类号 |
H01L23/498;H01L21/56 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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