发明名称 SEMICONDUCTOR SUBSTRATE WITH MOLDED SUPPORT LAYER
摘要 Various semiconductor substrates and methods of processing the same are disclosed. In one aspect, a method of manufacturing is provided that includes mounting a first semiconductor chip on a side of a first substrate. The first substrate has at least one thru-silicon-via. An insulating layer is molded on the side of the first substrate. The insulating layer provides a support structure to enable handling of the first substrate.
申请公布号 US2013113084(A1) 申请公布日期 2013.05.09
申请号 US201113289761 申请日期 2011.11.04
申请人 TOPACIO RODEN R.;MCLELLAN NEIL;LOW YIP SENG;LI JIANGUO 发明人 TOPACIO RODEN R.;MCLELLAN NEIL;LOW YIP SENG;LI JIANGUO
分类号 H01L23/498;H01L21/56 主分类号 H01L23/498
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