| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting diode having a high light emission ratio. <P>SOLUTION: A light-emitting diode 10 includes a substrate 100, a first semiconductor layer 110, a second semiconductor layer 130, an active layer 120, a plurality of three-dimensional nanostructures 140, a first electrode 150, and a second electrode 160. A surface on the side opposite to a surface adjacent to the active layer of the second semiconductor layer is a light emission surface of the light-emitting diode. The plurality of three-dimensional nanostructures are installed on the light emission surface of the light-emitting diode in a one-dimensional array format. Each of the three-dimensional nanostructures includes a first protrusion and a second protrusion. The first protrusion and the second protrusion extend according to the same extension rules. A first groove is formed between the first protrusion and second protrusion of the three-dimensional nanostructure. A second groove is formed between two adjacent three-dimensional nanostructures. The second groove has a depth deeper than the first groove. <P>COPYRIGHT: (C)2013,JPO&INPIT |
