发明名称 |
DEFECT REVIEW DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a preferable method relating to wafer edge observation using an electron microscope for searching for a cause of the occurrence of foreign materials and the like, when having detected the foreign materials or defects in wafer inspection. <P>SOLUTION: A defect review device includes: a sample stage 24 for holding a semiconductor wafer; an electronic optical system for irradiating the semiconductor wafer with an electron beam; detectors 15 and 23 for detecting secondary electrons or reflection electrons obtained by the irradiation with the electron beam; detectors 34 and 35 for detecting an X ray emitted from the semiconductor wafer by the irradiation with the electron beam; a column 16 having a variable inclination angle. An imaging field of the column 16 is moved to a defect position of an edge of the semiconductor wafer by the sample stage 24 and the edge of the semiconductor wafer is irradiated with the electron beam in a state in which the column 16 is inclined. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013084967(A) |
申请公布日期 |
2013.05.09 |
申请号 |
JP20120259787 |
申请日期 |
2012.11.28 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
OBARA KENJI;HIRAI TOMOHIRO |
分类号 |
H01L21/66;H01J37/16;H01J37/20;H01J37/22;H01J37/244;H01J37/28 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|