| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing an SiC bulk single crystal with characteristic improved for producing a device; and a single crystal SiC substrate. <P>SOLUTION: This method for producing an SiC bulk single crystal comprises: generating an SiC growing vapor phase in a crystal growth region of a growing crucible 3; growing an SiC bulk single crystal having a central vertical axis by deposition from the SiC growing vapor phase, at this time, deposition is carried out at the growing boundary surface of growing SiC bulk single crystal 2; feeding the SiC growing vapor phase at least partly from an SiC source material in a stockpiling region of the growing crucible, at least one doping substance belonging to the group consisting of nitrogen, aluminum, vanadium and boron is contained in the SiC growing vapor phase; partitioning the crystal growing region into an SiC surface section and a carbon surface section; and selecting SiC/C area ratio, obtained by dividing SiC surface section rate by carbon surface rate, so as to always have values lower than 0.01. <P>COPYRIGHT: (C)2013,JPO&INPIT |
