发明名称 |
RADIATION HARDENED MEMORY CELL AND DESIGN STRUCTURES |
摘要 |
A radiation hardened static memory cell, methods of manufacture and design structures are provided. The method includes forming one or more first gate stacks and second gate stacks on a substrate. The method further includes providing a shallow implant process for the one or more first gate stacks such that diffusion regions of the one or more first gate stacks are non-butted junction regions. The method further includes providing a deep implant process for the one or more second gates stack such that diffusions regions of the one or more second gate stacks are butted junction regions.
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申请公布号 |
US2013113043(A1) |
申请公布日期 |
2013.05.09 |
申请号 |
US201113292629 |
申请日期 |
2011.11.09 |
申请人 |
MASSEY JOHN G.;MCALLISTER SCOTT J.;MONTROSE CHARLES J.;RAUCH, III STEWART E.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MASSEY JOHN G.;MCALLISTER SCOTT J.;MONTROSE CHARLES J.;RAUCH, III STEWART E. |
分类号 |
H01L27/12;G06F17/50;H01L21/336 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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