发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF |
摘要 |
A semiconductor light emitting device include an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, and a first p-type semiconductor layer disposed on the active layer. The first p-type semiconductor layer has an uneven structure formed on a surface thereof. A second p-type semiconductor layer has an impurity concentration higher than that of the first p-type semiconductor layer. The second p-type semiconductor layer is disposed on the first p-type semiconductor layer and has an uneven structure formed on a surface thereof. A reflective metal layer is formed on the second p-type semiconductor layer.
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申请公布号 |
US2013113006(A1) |
申请公布日期 |
2013.05.09 |
申请号 |
US201213670129 |
申请日期 |
2012.11.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM TAE HUN;KIM GI BUM;KIM BUM JOON;CHAE SEUNG WAN;JO SU HYUN;SONG SANG YEOB |
分类号 |
H01L33/60 |
主分类号 |
H01L33/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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