发明名称 |
PHOTORESIST AND POST ETCH RESIDUE CLEANING SOLUTION |
摘要 |
A photoresist and post etch cleaning solution for semiconductor wafers comprising: A. a polar aprotic solvent, B. an inorganic base; C. a co-solvent for said inorganic base; D. a unsaturated cycloaliphatic compound having a ring ether group and at least one substituent bearing a primary hydroxyl group; E. an organic base comprising an amine compound; and F. a nonionic surfactant bearing at least one ether group. The wafer containing photoresist residue or post etch residue can be cleaned by contacting the solution in a spray or immersion.
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申请公布号 |
US2013116159(A1) |
申请公布日期 |
2013.05.09 |
申请号 |
US201213651790 |
申请日期 |
2012.10.15 |
申请人 |
DYNALOY, LLC;DYNALOY, LLC |
发明人 |
POLLARD KIMBERLY DONA;PFETTSCHER DONALD;HATFIELD MEAGAN;HOCHSTETLER SPENCER ERICH;WHEELER NICHELLE M.;PHENIS MICHAEL T. |
分类号 |
C11D3/60;G03F7/42 |
主分类号 |
C11D3/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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