DEVICE HAVING TSVs WITH GETTERING LAYER LATERAL TO TSV TIPS

摘要

An integrated circuit (IC) includes a substrate having a topside semiconductor surface including active circuitry configured to provide functionality and a bottomside surface. A plurality of through substrate vias (TSVs) extend from the topside semiconductor surface to beyond the bottomside surface to provide protruding TSV tips. The TSVs include an outer dielectric liner, a metal comprising diffusion barrier layer on the dielectric liner, and a metal filler on the metal comprising barrier layer. A dielectric metal gettering layer (MGL) is on the bottomside surface lateral to and on sidewalls of the protruding TSV tips. The MGL includes at least one metal gettering agent selected from a halogen or a Group 15 element in an average concentration from 0.1 to 10 atomic %.