发明名称 |
KINK POLY STRUCTURE FOR IMPROVING RANDOM SINGLE BIT FAILURE |
摘要 |
A memory cell having a kinked polysilicon layer structure, or a polysilicon layer structure with a top portion being narrower than a bottom portion, may greatly reduce random single bit (RSB) failures and may improve high density plasma (HDP) oxide layer fill-in by reducing defects caused by various impurities and/or a polysilicon layer short path. A kinked polysilicon layer structure may also be applied to floating gate memory cells either at the floating gate structure or the control gate structure.
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申请公布号 |
US2013113031(A1) |
申请公布日期 |
2013.05.09 |
申请号 |
US201113288275 |
申请日期 |
2011.11.03 |
申请人 |
LUO SHING ANN;HUNG YUNG-TAI;SU CHIN-TA;YAGN TAHONE;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUO SHING ANN;HUNG YUNG-TAI;SU CHIN-TA;YAGN TAHONE |
分类号 |
H01L29/788;H01L21/28 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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