| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high luminous efficiency. <P>SOLUTION: A semiconductor light-emitting element according to an embodiment comprises an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including the nitride semiconductor, and a light-emitting layer provided between the n-type semiconductor layer and the p-type semiconductor layer. The light-emitting layer includes a plurality of barrier layers and a plurality of well layers, which are alternately laminated one on top of another. A p-side barrier layer nearest to the p-type semiconductor layer among the plurality of barrier layers comprises a first layer including a group III element and a second layer which includes the group III element laminated with the first layer and in which an In composition ratio in the group III element of the second layer is higher than an In composition ratio in the group III element of the first layer. An average In composition ratio of the p-side barrier layer is higher than an average In composition ratio of an n-side barrier layer nearest to the n-type semiconductor layer among the plurality of barrier layers. <P>COPYRIGHT: (C)2013,JPO&INPIT |
