MANUFACTURING METHOD FOR SILICON CARBIDE SCHOTTKY BARRIER DIODE

摘要

PURPOSE: A method for manufacturing a silicon carbide schottky barrier diode is provided to form a compound oxide layer by thermal oxidation after nitrogen is injected into a wafer surface by using nitrogen plasma, and improve the growth rate of an oxide layer. CONSTITUTION: An n-epi layer(11) is formed on an n+ substrate(10). A compound oxide layer(12) is formed on the n-epi layer. A schottky metal(13) is deposited on the compound oxide layer and the n-epi layer. A pad metal(14) is deposited on the schottky metal. An ohmic metal(15) is deposited in the lower part of the n+ substrate.