发明名称 |
NONVOLATILE MEMORY AND CONTROLLING METHOD THEREOF |
摘要 |
PURPOSE: A nonvolatile memory and a controlling method thereof are provided to improve the reliability of a program operation by controlling the increment of program voltages. CONSTITUTION: The application number of program voltages applied to a selected word line is counted in a first program operation(S210). An increment between the program voltages for a second program operation is controlled according to the counted value before the second program operation is performed in the selected word line(S220). The second program operation is performed by applying the gradually increased program voltages to the selected word line(S230). |
申请公布号 |
KR20130047400(A) |
申请公布日期 |
2013.05.08 |
申请号 |
KR20110112401 |
申请日期 |
2011.10.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWAK, DONG HUN |
分类号 |
G11C16/12;G11C16/06;G11C16/14 |
主分类号 |
G11C16/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|