SELECTIVE EPITAXY OF SI-CONTAINING MATERIALS AND SUBSTITUTIONALLY DOPED CRYSTALLINE SI-CONTAINING MATERIALS
摘要
<p>The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.</p>
申请公布号
EP2588650(A1)
申请公布日期
2013.05.08
申请号
EP20110801264
申请日期
2011.06.23
申请人
MATHESON TRI-GAS, INC.;INTERNATIONAL BUSINESS MACHINES CORPORATION