METHOD OF FORMING III-V GROUP MATERIAL LAYER, SEMICONDUCTOR DEVICE COMPRISING III-V GROUP MATERIAL LAYER AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A method for forming a III-V group material layer, a semiconductor device including the III-V group material layer, and a manufacturing method thereof are provided to reduce defects by including an air gap around the lower side of the III-V group material layer. CONSTITUTION: A III-V group channel layer(42) is formed on a substrate. A gate insulation layer(56) is formed on the III-V group channel layer. A gate electrode(58) is formed on the gate insulation layer. A source electrode and a drain electrode are separated from the gate electrode. An air gap(36) is formed between the gate insulation layer and the lower side of the III-V group channel layer.