AMORPHOUS SEMICONDUCTOR THIN FILM TRANSISTOR WITH AN ACTIVE LAYER DOPED WITH DIFFERENTIAL CONCENTRATIONS AND ITS MANUFACTURING METHOD

摘要

PURPOSE: An amorphous semiconductor thin film transistor with an active layer doped with different concentrations and a manufacturing method thereof are provided to improve stability by making the doping concentration of a semiconductor layer different. CONSTITUTION: A gate is formed on a substrate. A gate insulating layer is formed on the gate. Semiconductor layers doped with different concentrations are laminated to form an active layer(140). A source(150) is in contact with the active layer. A drain(160) is in contact with the active layer.