发明名称 |
Unguarded Schottky barrier diodes with dielectric underetch at silicide interface |
摘要 |
One embodiment of the invention relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends around a perimeter of the recessed region. The diode further includes an anode that conforms to the recessed region. A dielectric layer extends over the dielectric interface surface of the cathode and further extends over a portion of the anode near the perimeter. Other devices and methods are also disclosed.
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申请公布号 |
US8435873(B2) |
申请公布日期 |
2013.05.07 |
申请号 |
US20070757767 |
申请日期 |
2007.06.04 |
申请人 |
DROBNY VLADIMIR FRANK;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
DROBNY VLADIMIR FRANK |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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