发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device is provided to improve a data processing speed by reducing capacitance in a data transmission line. CONSTITUTION: A plurality of data transmission lines receive data stored in a plurality of buffering units(340,350) and are shorter than a buffer corresponding to the buffering unit. A path multiplexing unit(360) multiplexes a data transmission path according to an address and transmits the data through the multiplexed data transmission path. The length of the buffer corresponds to the number of buffering units. [Reference numerals] (310) Memory bank
申请公布号 KR20130046120(A) 申请公布日期 2013.05.07
申请号 KR20110110493 申请日期 2011.10.27
申请人 SK HYNIX INC. 发明人 KIM, MIN SU;PARK, JIN SU
分类号 G11C7/10;G11C8/04 主分类号 G11C7/10
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